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THE CHEMISTRY AND DEVICE APPLICATIONS OF AMORPHOUS THIN-FILM INTERFACES

Abstract

This contribution has two thrusts. First, we study diffusion chemistry involving a phase transition in amorphous metal thin films. Second, we investigate how thin an amorphous metal thin-film may be deposited by utilizing an oxidative, solutionprocessed oxide film. Finally, we summarize the meanings of these findings by surveying plausible devices using the platform of amorphous metals. Amorphous metals have recently become popular in engineering, tools, hydrogen separation and electronic applications1–10 due to their morphology combined with properties that usually only come with metallic bonding. Primarily the studies investigate proper composition of the metals to achieve amorphousness over a certain temperature range in the bulk. Some studies have focused on decomposition of these bulk metallic glass (BMG) materials under oxidative stress,11,12 however study of these materials in the ultra-thin film is rare.

Material Code

PBM_LZz2V

Reference

(1) Dixon, J. E.; Cann, J. R.; Renfrew, C. Sci. Am. 218, 38-46. (2) Nicholson, P. T.; Shaw, I. Ancient Egyptian materials and technology; Cambridge University Press: Cambridge, UK, 2000. (3) Brill, R. H. Corning Museum of Glass | Articles | Does Glass Flow? http://www.cmog.org/dynamic.aspx?id=294#.TpZoJ7JliXs (accessed Oct 13, 2011). (4) Deville, H. S. C. Ann. Chim. Phys. 1854, 43, 31-33. (5) Riordan, M. The Silicon Dioxide Solution - IEEE Spectrum http://spectrum.ieee.org/semiconductors/design/the-silicon-dioxide-solution (accessed Oct 13, 2011). (6) Pilkington, L. A. B. Proc. R. Soc. Lond. A 1969, 314, 1-25. (7) Jackson, W. B.; Hoffman, R. L.; Herman, G. S. Appl. Phys. Lett. 2005, 87, 193503.

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